Composite photovoltaic structure and manufacturing method thereof

ABSTRACT

A composite photovoltaic structure having the following components is illustrated. A first photovoltaic unit is disposed on a transparent substrate, and electrically connected to a second photovoltaic unit in parallel, and the second photovoltaic unit is stacked on the first photovoltaic unit. The first photovoltaic unit is disposed on a second transparent electrode layer, and a first transparent conductive layer is disposed on a top of the first photovoltaic unit and electrically connected to a first transparent electrode layer, and the second photovoltaic unit is disposed on the first transparent conductive layer. A second transparent conductive layer is disposed on the second photovoltaic unit and is electrically connected to the second transparent electrode layer. Thus, the composite photovoltaic structure has a photoelectric reaction area of a significantly improved omnidirectional concentration gain, an efficiently induced current and a low manufacturing cost, without affecting the whole structure thickness.

BACKGROUND 1. Technical Field

The present disclosure relates to a solar photovoltaic technology, whichis dedicated to provide a composite photovoltaic structure having aphotoelectric reaction area of a significantly improved omnidirectionalconcentration gain, an efficiently induced current and a lowmanufacturing cost, without affecting the whole structure thickness, andto provide a manufacturing method of the composite photovoltaicstructure.

2. Related Art

The research of the thin film battery is a direction that people expectfrom renewable energy. Though the most commercial solar batteries aremade of silicon material, the thin film battery is still received withattention from industry and academia since its simple manufacturingprocess, light weight and flexibility.

When manufacturing the thin film battery, coating is a technical meansfor producing the thin film of the solar battery, which is benefit tomake the thin film more uniform and smoother. Further, reel-to-reel, orcalled roll-to-roll (R2R) process is a potential technology formassively producing the solar batteries with large areas, and the R2Rprocess is utilized in the industrial of other field. For example, basedon softness of flexible displays, the R2R process can incorporate well,such that the displays are produced with lower costs, high moldingability, light weight and shock proof.

There are several kinds of structures of photoelectric conversiondevices in the thin film batteries, and one is an organic polymerphotovoltaic structure, or perovskite photovoltaic structure, and itsrelated structure is shown in FIG. 1. Mainly, a photovoltaic unit (12)is disposed on a transparent substrate (11), a top surface layer (123)and a bottom surface layer (121) of the photovoltaic unit (12) arerespectively a transparent electron transport layer and a transparenthole transfer layer, and a transparent activation layer (122) isdisposed between the top surface layer (123) and the bottom surfacelayer (121).

A top surface of the transparent substrate (11) is disposed with a firsttransparent electrode layer (131) and a second transparent electrodelayer (132), and both of them are insulated to each other. Thephotovoltaic unit (12) is disposed on the second transparent electrodelayer (132), and a transparent conductive layer (141) is stacked on thetop surface layer (123) of the photovoltaic unit (12), and electricallyconnected the first transparent electrode layer (131). An insulationlayer (142) is disposed between the photovoltaic unit (12) and thetransparent conductive layer (141).

The photovoltaic structure similar to that of FIG. 1 can have thephotoelectric conversion of the wide optical spectrum, be operated underprocess conditions requiring only 180° C. or less, and have thephotoelectric conversion under the low illumination. However, under thelow illumination, due to the low illuminating source, the induce currentis still low even the photovoltaic structure has the high photoelectricconversion efficiency.

SUMMARY

According to one objective of the preset disclosure, the presentdisclosure provides a composite photovoltaic structure having aphotoelectric reaction area of a significantly improved omnidirectionalconcentration gain, an efficiently induced current and a lowmanufacturing cost, without affecting the whole structure thickness, andfurther provides a manufacturing method of the composite photovoltaicstructure.

The present disclosure provides a composite photovoltaic structure,comprising: a transparent substrate; a first photovoltaic unit, disposedon the transparent substrate; a second photovoltaic unit, stacked on thefirst photovoltaic unit, and electrically connected to the firstphotovoltaic unit in parallel, wherein top surface layers and bottomsurface layers of the first photovoltaic unit and the secondphotovoltaic unit are respectively transparent electron transport layersand transparent hole transport layers, transparent activation layers arerespectively disposed between the top surface layers and the bottomsurface layers of the first photovoltaic unit and the secondphotovoltaic unit; a first transparent electrode layer and a secondtransparent electrode layer, insulated to each other, disposed on a topsurface of the transparent substrate, wherein the first photovoltaicunit is disposed on the second transparent electrode layer, and thebottom surface layer of the first photovoltaic unit contacts the secondtransparent electrode layer; a first transparent conductive layer,electrically connected to the first transparent electrode layer,disposed on the top surface layer of the first photovoltaic unit,wherein the second photovoltaic unit is disposed on the firsttransparent conductive layer, and the bottom surface layer of the secondphotovoltaic unit contacts the first transparent conductive layer; asecond transparent conductive layer, electrically connected to thesecond transparent electrode layer, disposed on top surface layer of thesecond photovoltaic unit; a first insulation layer, disposed between oneside of the first photovoltaic unit and the first transparent conductivelayer, wherein the first transparent conductive layer extends to thefirst transparent electrode layer along the side of the firstphotovoltaic unit; and a second insulation layer, disposed between oneside of the second photovoltaic unit, one side of the first transparentconductive layer, another side of the photovoltaic unit and the secondtransparent conductive layer, wherein the second transparent conductivelayer extends to the second transparent electrode layer along the sideof the second photovoltaic unit, the side of the first transparentconductive layer and other side of the first photovoltaic unit.

According to the above technical features, the composite photovoltaicstructure can have a photoelectric reaction area of a significantlyimproved omnidirectional concentration gain, an efficiently inducedcurrent and a low manufacturing cost, without affecting the wholestructure thickness.

According to the above technical features, the composite photovoltaicstructure further comprises an optical hardened layer disposed betweenthe top surface of the transparent substrate and the first transparentelectrode layer, and between the top surface of the transparentsubstrate and the second transparent electrode layer

According to the above technical features, the first photovoltaic unitand the second photovoltaic unit are organic photovoltaic units.

According to the above technical features, the first photovoltaic unitand the second photovoltaic unit are perovskite photovoltaic units.

According to the above technical features, the first photovoltaic unitis an organic photovoltaic unit, and the second photovoltaic unit is aperovskite photovoltaic unit.

According to the above technical features, the first photovoltaic unitis a perovskite photovoltaic unit, and the second photovoltaic unit isan organic photovoltaic unit.

According to the above technical features, the first photovoltaic unitand the second photovoltaic unit are organic photovoltaic units; thetransparent electron transport layers of the first photovoltaic unit andthe second photovoltaic unit are mainly made of PEI or PEIE, andpreferably have thicknesses of 0.5 nm through 10 nm, wherein PEI(polyethylenimine) or PEIE (polyethylenimine ethoxylated) is coated viaslits and then dried by hot air for 3 minutes with a temperature of 90°C. through 140° C. to form the transparent electron transport layers ofthe first photovoltaic unit and the second photovoltaic unit; thetransparent hole transport layers of the first photovoltaic unit and thesecond photovoltaic unit are mainly made of a combination ofPEDOT:PSS(Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) whichis diluted with solvent and comprises a mixture of a polymer of aplurality of EDOT (3,4-ethylenedioxythiophene monomer) and a pluralityof sodium-p-styrenesulfonate (PSS), and preferably have thicknesses of100 nm through 500 nm, wherein the combination of PEDOT:PSS is dilutedwith alcohol or other solvent, coated via slits and then dried bynitrogen atmosphere for 5 minutes with a temperature of 90° C. through140° C. to form the transparent hole transport layers of the firstphotovoltaic unit and the second photovoltaic unit; the transparentactivation layers of the first photovoltaic unit and the secondphotovoltaic unit are made of a combination of P3HT/PCBM or acombination of PCPDTBT/PCBM(poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C₆₁-butyric acid methyl ester) which is diluted with solvent, andpreferably have thicknesses of 100 nm through 500 nm, wherein thecombination of P3HT/PCBM is a mixture comprising a polymer semiconductorof a plurality of poly(3-hexylthiophene)(P3HT (p-type material) and aplurality of phenyl-C₆₁-butyric acid methyl ester (PCBM), thecombination of P3HT/PCBM or the combination of PCPDTBT/PCBM is dilutedwith ortho-xylene, coated via slits and then dried by nitrogenatmosphere for 3 minutes with a temperature of 90° C. through 140° C. toform the transparent activation layers of the first photovoltaic unitand the second photovoltaic unit.

According to the above technical features, the first photovoltaic unitand the second photovoltaic unit are perovskite photovoltaic units; thetransparent electron transport layers of the first photovoltaic unit andthe second photovoltaic unit are made of a combination of PEDOT:PSS, ormade of P3HT (poly(3-hexylthiophene)) or PTAA(poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), and preferably havethicknesses of 100 nm through 500 nm, wherein the combination ofPEDOT:PSS, P3HT or PTAA is coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layers of the first photovoltaicunit and the second photovoltaic unit; the transparent hole transportlayers of the first photovoltaic unit and the second photovoltaic unitare made of a combination of PDPP3T:PCBM which is diluted with solvent,and preferably have thicknesses of 1 nm through 100 nm, wherein thecombination of PDPP3T:PCBM is diluted with the solvent, coated via slitsand then dried by nitrogen atmosphere for 5 minutes with a temperatureof 90° C. through 140° C. to form the transparent hole transport layersof the first photovoltaic unit and the second photovoltaic unit; thetransparent activation layers of the first photovoltaic unit and thesecond photovoltaic unit are made of one or a combination of CH₃NH₃PbI₃,CsPbBr₃, CsPbI₃, FAPbI₃ (formamidinium lead iodide) and FAPbBr₃(formamidinium lead bromide) which is diluted with solvent, andpreferably have thicknesses of 200 nm through 800 nm, wherein the one orcombination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃ and FAPbBr₃ isdiluted with the solvent, coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent activation layers of the first photovoltaic unitand the second photovoltaic unit.

According to the above technical features, the first photovoltaic unitis an organic photovoltaic unit, and the second photovoltaic unit is aperovskite photovoltaic unit; the transparent electron transport layerof the first photovoltaic unit is mainly made of PEI or PEIE, andpreferably has a thickness of 0.5 nm through 10 nm, wherein PEI(polyethylenimine) or PEIE (polyethylenimine ethoxylated) is coated viaslits and then dried by hot air for 3 minutes with a temperature of 90°C. through 140° C. to form the transparent electron transport layer ofthe first photovoltaic unit; the transparent hole transport layer of thefirst photovoltaic unit is mainly made of a combination ofPEDOT:PSS(Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) whichis diluted with solvent and comprises a mixture of a polymer of aplurality of EDOT (3,4-ethylenedioxythiophene monomer) and a pluralityof sodium-p-styrenesulfonate (PSS), and preferably has a thickness of100 nm through 500 nm, wherein the combination of PEDOT:PSS is dilutedwith alcohol or other solvent, coated via slits and then dried bynitrogen atmosphere for 5 minutes with a temperature of 90° C. through140° C. to form the transparent hole transport layer of the firstphotovoltaic unit; the transparent activation layer of the firstphotovoltaic unit is made of a combination of P3HT/PCBM or a combinationof PCPDTBT/PCBM(poly[2,6-[(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C₆₁-butyric acid methyl ester) which is diluted with solvent, andpreferably has a thickness of 100 nm through 500 nm, wherein thecombination of P3HT/PCBM is a mixture comprising a polymer semiconductorof a plurality of poly(3-hexylthiophene)(P3HT (p-type material) and aplurality of phenyl-C₆₁-butyric acid methyl ester (PCBM), thecombination of P3HT/PCBM or the combination of PCPDTBT/PCBM is dilutedwith ortho-xylene, coated via slits and then dried by nitrogenatmosphere for 3 minutes with a temperature of 90° C. through 140° C. toform the transparent activation layer of the first photovoltaic unit;the transparent electron transport layer of the second photovoltaic unitis made of a combination of PEDOT:PSS, or made of P3HT(poly(3-hexylthiophene)) or PTAA(poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), and preferably has athickness of 100 nm through 500 nm, wherein the combination ofPEDOT:PSS, P3HT or PTAA is coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layer of the second photovoltaicunit; the transparent hole transport layer of the second photovoltaicunit is made of a combination of PDPP3T:PCBM which is diluted withsolvent, and preferably has a thicknesses of 1 nm through 100 nm,wherein the combination of PDPP3T:PCBM is diluted with the solvent,coated via slits and then dried by nitrogen atmosphere for 5 minuteswith a temperature of 90° C. through 140° C. to form the transparenthole transport layer of the second photovoltaic unit; the transparentactivation layer of the second photovoltaic unit is made of one or acombination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃ (formamidinium leadiodide) and FAPbBr₃ (formamidinium lead bromide) which is diluted withsolvent, and preferably have thicknesses of 200 nm through 800 nm,wherein the one or combination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃and FAPbBr₃ is diluted with the solvent, coated via slits and then driedby nitrogen atmosphere for 5 minutes with a temperature of 90° C.through 140° C. to form the transparent activation layer of the secondphotovoltaic unit.

According to the above technical features, the first photovoltaic unitis a perovskite photovoltaic unit, and the second photovoltaic unit isan organic photovoltaic unit; the transparent electron transport layerof the first photovoltaic unit is made of a combination of PEDOT:PSS, ormade of P3HT (poly(3-hexylthiophene)) or PTAA(poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), and preferably has athickness of 100 nm through 500 nm, wherein the combination ofPEDOT:PSS, P3HT or PTAA is coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layer of the first photovoltaicunit; the transparent hole transport layer of the first photovoltaicunit is made of a combination of PDPP3T:PCBM which is diluted withsolvent, and preferably has a thicknesses of 1 nm through 100 nm,wherein the combination of PDPP3T:PCBM is diluted with the solvent,coated via slits and then dried by nitrogen atmosphere for 5 minuteswith a temperature of 90° C. through 140° C. to form the transparenthole transport layer of the first photovoltaic unit; the transparentactivation layer of the first photovoltaic unit is made of one or acombination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃ (formamidinium leadiodide) and FAPbBr₃ (formamidinium lead bromide) which is diluted withsolvent, and preferably have thicknesses of 200 nm through 800 nm,wherein the one or combination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃and FAPbBr₃ is diluted with the solvent, coated via slits and then driedby nitrogen atmosphere for 5 minutes with a temperature of 90° C.through 140° C. to form the transparent activation layer of the firstphotovoltaic unit; the transparent electron transport layer of thesecond photovoltaic unit is mainly made of PEI or PEIE, and preferablyhas a thickness of 0.5 nm through 10 nm, wherein PEI (polyethylenimine)or PEIE (polyethylenimine ethoxylated) is coated via slits and thendried by hot air for 3 minutes with a temperature of 90° C. through 140°C. to form the transparent electron transport layer of the secondphotovoltaic unit; the transparent hole transport layer of the secondphotovoltaic unit is mainly made of a combination ofPEDOT:PSS(Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) whichis diluted with solvent and comprises a mixture of a polymer of aplurality of EDOT (3,4-ethylenedioxythiophene monomer) and a pluralityof sodium-p-styrenesulfonate (PSS), and preferably has a thickness of100 nm through 500 nm, wherein the combination of PEDOT:PSS is dilutedwith alcohol or other solvent, coated via slits and then dried bynitrogen atmosphere for 5 minutes with a temperature of 90° C. through140° C. to form the transparent hole transport layer of the secondphotovoltaic unit; the transparent activation layer of the secondphotovoltaic unit is made of a combination of P3HT/PCBM or a combinationof PCPDTBT/PCBM(poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-bldithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C₆₁-butyric acid methyl ester) which is diluted with solvent, andpreferably has a thickness of 100 nm through 500 nm, wherein thecombination of P3HT/PCBM is a mixture comprising a polymer semiconductorof a plurality of poly(3-hexylthiophene)(P3HT (p-type material) and aplurality of phenyl-C₆₁-butyric acid methyl ester (PCBM), thecombination of P3HT/PCBM or the combination of PCPDTBT/PCBM is dilutedwith ortho-xylene, coated via slits and then dried by nitrogenatmosphere for 3 minutes with a temperature of 90° C. through 140° C. toform the transparent activation layer of the second photovoltaic unit.

According to the above technical features, ITO (indium tin oxide), IZO(indium doped zinc oxide) or AZO (aluminum doped zinc oxide) isevaporated or sputtered on the transparent substrate to form thetransparent electrode material preferably with a thickness of 50 nmthrough 200 nm.

According to the above technical features, the first transparentconductive layer is made of Ag, Au, Pt or Pd, and preferably has athickness of 50 nm through 200 nm, wherein Ag, Au, Pt or Pd isevaporated or sputtered to form the first transparent conductive layer.

According to the above technical features, the second transparentconductive layer is made of Ag, Au, Pt or Pd, and preferably has athickness of 50 nm through 200 nm, wherein Ag, Au, Pt or Pd isevaporated or sputtered to form the second transparent conductive layer.

According to the above technical features, the optical hardened layer isone or a combination of acrylic, epoxy and silicon dioxide, andpreferably has a thickness of 1 μm through 5 μm.

According to the above technical features, the first insulation layerand the second insulation layer are made of polyesters polymer, whereinpolyesters polymer is coated and printed, and then dried by hot air for10 minutes with a temperature of 90° C. through 140° C. to form thefirst insulation layer and the second insulation layer.

The present disclosure provides a manufacturing method of a compositephotovoltaic structure, comprising steps of: a. forming a transparentelectrode material, and providing a transparent substrate, wherein thetransparent electrode material with a predetermined thickness isdisposed on a top surface of the transparent substrate; b. forming afirst photovoltaic unit, wherein materials of layers of the firstphotovoltaic unit are sequentially formed on the transparent electrodematerial, a top surface layer and a bottom surface layer of the firstphotovoltaic unit are respectively a transparent electron transportlayer and a transparent hole transport layer, and a transparentactivation layer is formed between the top surface layer and the bottomsurface layer of the first photovoltaic unit; c. forming a firstinsulation layer, wherein the top surface layer of the firstphotovoltaic unit is etched to form at least one first insulationmaterial channel which penetrates the transparent electrode material,and the first insulation material channel is filled with insulationmaterial, such that the first insulation layer is formed in the firstinsulation material channel, and the first insulation layer separatesthe transparent electrode material into a first transparent electrodelayer and a second transparent electrode layer, wherein the firsttransparent electrode layer is disposed under the first photovoltaicunit, and the second transparent electrode layer is disposed outside thefirst photovoltaic unit; d. forming a first transparent conductivelayer, wherein a side of the first insulation layer is etched to form afirst transparent conductive material channel which penetrates thetransparent electrode material from the top surface layer of the firstphotovoltaic unit, and transparent conductive material is disposed onthe top surface layer of the first photovoltaic unit and in the firsttransparent conductive material channel, such that the first transparentconductive layer is formed, wherein the first transparent conductivelayer is disposed on the top surface layer of the first photovoltaicunit, extends along the side of the first insulation layer, and iselectrically connected to the first transparent electrode layer; e.forming a second photovoltaic unit, wherein materials of layers of thesecond photovoltaic unit are sequentially formed on the firsttransparent conductive layer which is disposed on the first photovoltaicunit, a top surface layer and a bottom surface layer of the secondphotovoltaic unit are respectively a transparent electron transportlayer and a transparent hole transport layer, and a transparentactivation layer is disposed between the top surface layer and thebottom surface layer of the second photovoltaic unit; f. forming asecond insulation layer, wherein the top surface layer of the secondphotovoltaic unit is etched to form at least one second insulationmaterial channel which penetrates the transparent electrode material,and the second insulation material channel is filled with insulationmaterial, such that the second insulation layer is formed in the secondinsulation material channel; g. forming a second transparent conductivelayer, wherein a side of the second insulation layer is etched to form asecond transparent conductive material channel which penetrates thetransparent electrode material from the top surface layer of the secondphotovoltaic unit, and transparent conductive material is disposed onthe top surface layer of the second photovoltaic unit and in the secondtransparent conductive material channel, such that the secondtransparent conductive layer is formed, wherein the second transparentconductive layer is disposed on the top surface layer of the secondphotovoltaic unit, extends along the side of the second insulationlayer, and is electrically connected to the second transparent electrodelayer; and h. splitting a product, wherein a top surface of the secondtransparent conductive layer is etched to form a cutting channel whichpenetrates the transparent electrode material, so as to separate the atleast one of composite photovoltaic structures on the transparentsubstrate, wherein the composite photovoltaic structure has the firstphotovoltaic unit and the second photovoltaic unit stacked on the firstphotovoltaic unit, and both of them are disposed on the transparentsubstrate and electrically connected to each other in parallel.

According to the above technical features, an optical hardened layer isdisposed on the top surface of the transparent substrate, and thetransparent electrode material is disposed on the optical hardenedlayer.

According to the above technical features, the first photovoltaic unitand the second photovoltaic unit are organic photovoltaic units.

According to the above technical features, the first photovoltaic unitand the second photovoltaic unit are perovskite photovoltaic units.

According to the above technical features, the first photovoltaic unitis an organic photovoltaic unit, and the second photovoltaic unit is aperovskite photovoltaic unit.

According to the above technical features, the first photovoltaic unitis a perovskite photovoltaic unit, and the second photovoltaic unit isan organic photovoltaic unit.

According to the above technical features, the first photovoltaic unitand the second photovoltaic unit are organic photovoltaic units; thetransparent electron transport layers of the first photovoltaic unit andthe second photovoltaic unit are mainly made of PEI or PEIE, and havethicknesses of 0.5 nm through 10 nm, wherein PEI (polyethylenimine) orPEIE (polyethylenimine ethoxylated) is coated via slits and then driedby hot air for 3 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layers of the first photovoltaicunit and the second photovoltaic unit; the transparent hole transportlayers of the first photovoltaic unit and the second photovoltaic unitare mainly made of a combination ofPEDOT:PSS(Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) whichis diluted with solvent and comprises a mixture of a polymer of aplurality of EDOT (3,4-ethylenedioxythiophene monomer) and a pluralityof sodium-p-styrenesulfonate (PSS), and preferably have thicknesses of100 nm through 500 nm, wherein the combination of PEDOT:PSS is dilutedwith alcohol or other solvent, coated via slits and then dried bynitrogen atmosphere for 5 minutes with a temperature of 90° C. through140° C. to form the transparent hole transport layers of the firstphotovoltaic unit and the second photovoltaic unit; the transparentactivation layers of the first photovoltaic unit and the secondphotovoltaic unit are made of a combination of P3HT/PCBM or acombination of PCPDTBT/PCBM which is diluted with solvent, andpreferably have thicknesses of 100 nm through 500 nm, wherein thecombination of P3HT/PCBM is a mixture comprising a polymer semiconductorof a plurality of poly(3-hexylthiophene)(P3HT (p-type material) and aplurality of phenyl-C₆₁-butyric acid methyl ester (PCBM), thecombination of P3HT/PCBM or the combination of PCPDTBT/PCBM is dilutedwith ortho-xylene, coated via slits and then dried by nitrogenatmosphere for 3 minutes with a temperature of 90° C. through 140° C. toform the transparent activation layers of the first photovoltaic unitand the second photovoltaic unit.

According to the above technical features, the first photovoltaic unitand the second photovoltaic unit are perovskite photovoltaic units; thetransparent electron transport layers of the first photovoltaic unit andthe second photovoltaic unit are made of a combination of PEDOT:PSS, ormade of P3HT (poly(3-hexylthiophene)) or PTAA(poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), and preferably havethicknesses of 100 nm through 500 nm, wherein the combination ofPEDOT:PSS, P3HT or PTAA is coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layers of the first photovoltaicunit and the second photovoltaic unit; the transparent hole transportlayers of the first photovoltaic unit and the second photovoltaic unitare made of a combination of PDPP3T:PCBM which is diluted with solvent,and preferably have thicknesses of 1 nm through 100 nm, wherein thecombination of PDPP3T:PCBM is diluted with the solvent, coated via slitsand then dried by nitrogen atmosphere for 5 minutes with a temperatureof 90° C. through 140° C. to form the transparent hole transport layersof the first photovoltaic unit and the second photovoltaic unit; thetransparent activation layers of the first photovoltaic unit and thesecond photovoltaic unit are made of one or a combination of CH₃NH₃PbI₃,CsPbBr₃, CsPbI₃, FAPbI₃ (formamidinium lead iodide) and FAPbBr₃(formamidinium lead bromide) which is diluted with solvent, andpreferably have thicknesses of 200 nm through 800 nm, wherein the one orcombination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃ and FAPbBr₃ isdiluted with the solvent, coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent activation layers of the first photovoltaic unitand the second photovoltaic unit.

According to the above technical features, the first photovoltaic unitis an organic photovoltaic unit, and the second photovoltaic unit is aperovskite photovoltaic unit; the transparent electron transport layerof the first photovoltaic unit is mainly made of PEI or PEIE, andpreferably has a thickness of 0.5 nm through 10 nm, wherein PEI(polyethylenimine) or PEIE (polyethylenimine ethoxylated) is coated viaslits and then dried by hot air for 3 minutes with a temperature of 90°C. through 140° C. to form the transparent electron transport layer ofthe first photovoltaic unit; the transparent hole transport layer of thefirst photovoltaic unit is mainly made of a combination ofPEDOT:PSS(Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) whichis diluted with solvent and comprises a mixture of a polymer of aplurality of EDOT (3,4-ethylenedioxythiophene monomer) and a pluralityof sodium-p-styrenesulfonate (PSS), and preferably has a thickness of100 nm through 500 nm, wherein the combination of PEDOT:PSS is dilutedwith alcohol or other solvent, coated via slits and then dried bynitrogen atmosphere for 5 minutes with a temperature of 90° C. through140° C. to form the transparent hole transport layer of the firstphotovoltaic unit; the transparent activation layer of the firstphotovoltaic unit is made of a combination of P3HT/PCBM or a combinationof PCPDTBT/PCBM(poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C₆₁-butyric acid methyl ester) which is diluted with solvent, andpreferably has a thickness of 100 nm through 500 nm, wherein thecombination of P3HT/PCBM is a mixture comprising a polymer semiconductorof a plurality of poly(3-hexylthiophene)(P3HT (p-type material) and aplurality of phenyl-C₆₁-butyric acid methyl ester (PCBM), thecombination of P3HT/PCBM or the combination of PCPDTBT/PCBM is dilutedwith ortho-xylene, coated via slits and then dried by nitrogenatmosphere for 3 minutes with a temperature of 90° C. through 140° C. toform the transparent activation layer of the first photovoltaic unit;the transparent electron transport layer of the second photovoltaic unitis made of a combination of PEDOT:PSS, or made of P3HT(poly(3-hexylthiophene)) or PTAA(poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), and preferably has athickness of 100 nm through 500 nm, wherein the combination ofPEDOT:PSS, P3HT or PTAA is coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layer of the second photovoltaicunit; the transparent hole transport layer of the second photovoltaicunit is made of a combination of PDPP3T:PCBM which is diluted withsolvent, and preferably has a thicknesses of 1 nm through 100 nm,wherein the combination of PDPP3T:PCBM is diluted with the solvent,coated via slits and then dried by nitrogen atmosphere for 5 minuteswith a temperature of 90° C. through 140° C. to form the transparenthole transport layer of the second photovoltaic unit; the transparentactivation layer of the second photovoltaic unit is made of one or acombination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃ (formamidinium leadiodide) and FAPbBr₃ (formamidinium lead bromide) which is diluted withsolvent, and preferably have thicknesses of 200 nm through 800 nm,wherein the one or combination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃and FAPbBr₃ is diluted with the solvent, coated via slits and then driedby nitrogen atmosphere for 5 minutes with a temperature of 90° C.through 140° C. to form the transparent activation layer of the secondphotovoltaic unit.

According to the above technical features, the first photovoltaic unitis a perovskite photovoltaic unit, and the second photovoltaic unit isan organic photovoltaic unit; the transparent electron transport layerof the first photovoltaic unit is made of a combination of PEDOT:PSS, ormade of P3HT (poly(3-hexylthiophene)) or PTAA(poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), and preferably has athickness of 100 nm through 500 nm, wherein the combination ofPEDOT:PSS, P3HT or PTAA is coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layer of the first photovoltaicunit; the transparent hole transport layer of the first photovoltaicunit is made of a combination of PDPP3T:PCBM which is diluted withsolvent, and preferably has a thicknesses of 1 nm through 100 nm,wherein the combination of PDPP3T:PCBM is diluted with the solvent,coated via slits and then dried by nitrogen atmosphere for 5 minuteswith a temperature of 90° C. through 140° C. to form the transparenthole transport layer of the first photovoltaic unit; the transparentactivation layer of the first photovoltaic unit is made of one or acombination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃ (formamidinium leadiodide) and FAPbBr₃ (formamidinium lead bromide) which is diluted withsolvent, and preferably have thicknesses of 200 nm through 800 nm,wherein the one or combination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃and FAPbBr₃ is diluted with the solvent, coated via slits and then driedby nitrogen atmosphere for 5 minutes with a temperature of 90° C.through 140° C. to form the transparent activation layer of the firstphotovoltaic unit; the transparent electron transport layer of thesecond photovoltaic unit is mainly made of PEI or PEIE, and preferablyhas a thickness of 0.5 nm through 10 nm, wherein PEI (polyethylenimine)or PEIE (polyethylenimine ethoxylated) is coated via slits and thendried by hot air for 3 minutes with a temperature of 90° C. through 140°C. to form the transparent electron transport layer of the secondphotovoltaic unit; the transparent hole transport layer of the secondphotovoltaic unit is mainly made of a combination ofPEDOT:PSS(Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) whichis diluted with solvent and comprises a mixture of a polymer of aplurality of EDOT (3,4-ethylenedioxythiophene monomer) and a pluralityof sodium-p-styrenesulfonate (PSS), and preferably has a thickness of100 nm through 500 nm, wherein the combination of PEDOT:PSS is dilutedwith alcohol or other solvent, coated via slits and then dried bynitrogen atmosphere for 5 minutes with a temperature of 90° C. through140° C. to form the transparent hole transport layer of the secondphotovoltaic unit; the transparent activation layer of the secondphotovoltaic unit is made of a combination of P3HT/PCBM or a combinationof PCPDTBT/PCBM(poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C₆₁-butyric acid methyl ester) which is diluted with solvent, andpreferably has a thickness of 100 nm through 500 nm, wherein thecombination of P3HT/PCBM is a mixture comprising a polymer semiconductorof a plurality of poly(3-hexylthiophene)(P3HT (p-type material) and aplurality of phenyl-C₆₁-butyric acid methyl ester (PCBM), thecombination of P3HT/PCBM or the combination of PCPDTBT/PCBM is dilutedwith ortho-xylene, coated via slits and then dried by nitrogenatmosphere for 3 minutes with a temperature of 90° C. through 140° C. toform the transparent activation layer of the second photovoltaic unit.

According to the above technical features, ITO (indium tin oxide), IZO(indium doped zinc oxide) or AZO (aluminum doped zinc oxide) isevaporated or sputtered on the transparent substrate to form thetransparent electrode material preferably with a thickness of 50 nmthrough 200 nm.

According to the above technical features, the first transparentconductive layer is made of Ag, Au, Pt or Pd, and preferably has athickness of 50 nm through 200 nm, wherein Ag, Au, Pt or Pd isevaporated or sputtered to form the first transparent conductive layer.

According to the above technical features, the second transparentconductive layer is made of Ag, Au, Pt or Pd, and preferably has athickness of 50 nm through 200 nm, wherein Ag, Au, Pt or Pd isevaporated or sputtered to form the second transparent conductive layer.

According to the above technical features, the optical hardened layer isone or a combination of acrylic, epoxy and silicon dioxide, and has athickness of 1 μm through 5 μm.

According to the above technical features, the first insulation layerand the second insulation layer are made of polyesters polymer, whereinpolyesters polymer is coated and printed, and then dried by hot air for10 minutes with a temperature of 90° C. through 140° C. to form thefirst insulation layer and the second insulation layer.

Accordingly, by electrically connecting the first photovoltaic unit andthe second photovoltaic unit in parallel on the transparent substrate,the composite photovoltaic structure has a photoelectric reaction areaof a significantly improved omnidirectional concentration gain, anefficiently induced current and a low manufacturing cost, withoutaffecting the whole structure thickness.

BRIEF DESCRIPTIONS OF DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present disclosure, and are incorporated in andconstitute a part of this specification. The drawings illustrateexemplary embodiments of the present disclosure and, together with thedescription, serve to explain the principles of the present disclosure.

FIG. 1 is a sectional view of a conventional photovoltaic structure.

FIG. 2 is a sectional view of a composite photovoltaic structure of afirst embodiment of the present disclosure.

FIG. 3 is a sectional view of a composite photovoltaic structure of asecond embodiment of the present disclosure.

FIG. 4 is a basic flow chart of a method for manufacturing a compositephotovoltaic structure.

FIG. 5 is a schematic diagram showing the forming completion of thetransparent electrode material of the present disclosure.

FIG. 6 is a schematic diagram showing the forming completion of thefirst photovoltaic unit of the present disclosure.

FIG. 7 is a schematic diagram showing the completion of the firstinsulation layer of the present disclosure.

FIG. 8 is a schematic diagram showing the forming completion of thefirst transparent conductive layer of the present disclosure.

FIG. 9 is a schematic diagram showing the forming completion of thesecond photovoltaic unit of the present disclosure.

FIG. 10 is a schematic diagram showing the forming completion of thesecond insulation layer of the present disclosure.

FIG. 11 is a schematic diagram showing the forming completion of thesecond transparent conductive layer of the present disclosure.

FIG. 12 is a schematic diagram showing the split completion of the firsttransparent electrode layer and the second transparent electrode layer.

DESCRIPTIONS OF EXEMPLARY EMBODIMENTS

The present disclosure provides a composite photovoltaic structurehaving a photoelectric reaction area of a significantly improvedomnidirectional concentration gain, an efficiently induced current and alow manufacturing cost, without affecting the whole structure thickness.As shown in FIG. 2, components of the composite photovoltaic structureof the present disclosure are described as follows. A first photovoltaicunit (30) is disposed on a transparent substrate (20), and a secondphotovoltaic unit (40) is disposed on the first photovoltaic unit (30)and electrically connected to the first photovoltaic unit (30) inparallel. Top surface layers (33), (43) and bottom surface layers (31),(41) of the first photovoltaic unit (30) and the second photovoltaicunit (40) are respectively transparent electron transport layers andtransparent hole transport layers, and transparent activation layers(32), (42) are respectively disposed between the top surface layers(33), (43) and the bottom surface layers (31), (41) of the firstphotovoltaic unit (30) and the second photovoltaic unit (40).

A first transparent electrode layer (51) and a second transparentelectrode layer (52), insulated to each other, are disposed on a topsurface of the transparent substrate (20). The first photovoltaic unit(30) is disposed on the second transparent electrode layer (52), and thebottom surface layer (31) of the first photovoltaic unit (30) contactsthe second transparent electrode layer (52). A first transparentconductive layer (61) electrically connected to the first transparentelectrode layer (51) is disposed on the top surface layer (33) of thefirst photovoltaic unit (30).

The second photovoltaic unit (40) is disposed on the first transparentconductive layer (61), and the bottom surface layer (41) of the secondphotovoltaic unit (40) contacts the first transparent conductive layer(61). A second transparent conductive layer (62) electrically connectedto the second transparent electrode layer (52) is disposed on topsurface layer (43) of the second photovoltaic unit (40).

A first insulation layer (71) is disposed between one side of the firstphotovoltaic unit (30) and the first transparent conductive layer (61),wherein the first transparent conductive layer (61) extends to the firsttransparent electrode layer (51) along the side of the firstphotovoltaic unit (30). A second insulation layer (72) is disposedbetween one side of the second photovoltaic unit (40), one side of thefirst transparent conductive layer (61), another side of thephotovoltaic unit (30) and the second transparent conductive layer (62),wherein the second transparent conductive layer (62) extends to thesecond transparent electrode layer (52) along the side of the secondphotovoltaic unit (40), the side of the first transparent conductivelayer (61) and other side of the first photovoltaic unit (40).

In principle, when using the composite photovoltaic structure inpractice, several composite photovoltaic structures are electricallyconnected in series to form photovoltaic battery assembly, and atomiclayer deposition (ALD) is utilized to spray aluminum oxide and silicondioxide deposition which forms a gas barrier package, or the glasssubstrate or transparent plastic substrate is utilized to form the gasbarrier package, so as to form the design that the first photovoltaicunit (30) and the second photovoltaic unit (40), both disposed on thetransparent substrate (20), are electrically connected to each other inparallel. Thus, without affecting the whole structure thickness, thecomposite photovoltaic structure has a photoelectric reaction area of asignificantly improved omnidirectional concentration gain, anefficiently induced current and a low manufacturing cost, and meets thedemand of small size product. By the way, the transparent substrate (20)can be the transparent glass or transparent plastic thin film, such astransparent PET thin film.

Further, the composite photovoltaic structure of another embodiment canbe shown in FIG. 3, an optical hardened layer (80) disposed between thetop surface of the transparent substrate (20) and the first transparentelectrode layer (51), and between the top surface of the transparentsubstrate (20) and the second transparent electrode layer (52). Inimplementation, the optical hardened layer (80) is one or a combinationof acrylic, epoxy and silicon dioxide, and preferably has a thickness of1 μm through 5 μm. By disposing the optical hardened layer (80), themechanical strength of the composite photovoltaic structure can beincreased.

In implementation, the first photovoltaic unit (30) and the secondphotovoltaic unit (40) are organic photovoltaic units; or alternatively,the first photovoltaic unit (30) and the second photovoltaic unit (40)are perovskite photovoltaic units; or alternatively, the firstphotovoltaic unit (30) is an organic photovoltaic unit, and the secondphotovoltaic unit (40) is a perovskite photovoltaic unit; oralternatively, the first photovoltaic unit (30) is a perovskitephotovoltaic unit, and the second photovoltaic unit (40) is an organicphotovoltaic unit.

It is also noted that, whether top surface layers (31), (41) of thefirst photovoltaic unit (30) and the second photovoltaic unit (40) arethe transparent electron transport layers or the transparent holetransport layer can be adjusted according to the actual electrodeallocation.

In one embodiment, the first photovoltaic unit (30) and the secondphotovoltaic unit (40) are organic photovoltaic units. The transparentelectron transport layers of the first photovoltaic unit (30) and thesecond photovoltaic unit (40) are mainly made of PEI or PEIE, andpreferably have thicknesses of 0.5 nm through 10 nm, wherein PEI(polyethylenimine) or PEIE (polyethylenimine ethoxylated) is coated viaslits and then dried by hot air for 3 minutes with a temperature of 90°C. through 140° C. to form the transparent electron transport layers ofthe first photovoltaic unit (30) and the second photovoltaic unit (40).The transparent hole transport layers of the first photovoltaic unit(30) and the second photovoltaic unit (40) are mainly made of acombination ofPEDOT:PSS(Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) whichis diluted with solvent and comprises a mixture of a polymer of aplurality of EDOT (3,4-ethylenedioxythiophene monomer) and a pluralityof sodium-p-styrenesulfonate (PSS) (i.e. the combination of PEDOT andPSS), and preferably have thicknesses of 100 nm through 500 nm, whereinthe combination of PEDOT:PSS is diluted with alcohol or other solvent,coated via slits and then dried by nitrogen atmosphere for 5 minuteswith a temperature of 90° C. through 140° C. to form the transparenthole transport layers of the first photovoltaic unit (30) and the secondphotovoltaic unit (40). The transparent activation layers (32), (42) ofthe first photovoltaic unit (30) and the second photovoltaic unit (40)are made of a combination of P3HT/PCBM (i.e. the combination of P3HT andPCBM) or a combination of PCPDTBT/PCBM(poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C₆₁-butyric acid methyl ester) (i.e. the combination of PCPDTBTand PCBM) which is diluted with solvent, and preferably have thicknessesof 100 nm through 500 nm, wherein the combination of P3HT/PCBM is amixture comprising a polymer semiconductor of a plurality ofpoly(3-hexylthiophene)(P3HT (p-type material) and a plurality ofphenyl-C₆₁-butyric acid methyl ester (PCBM), the combination ofP3HT/PCBM or the combination of PCPDTBT/PCBM is diluted withortho-xylene, coated via slits and then dried by nitrogen atmosphere for3 minutes with a temperature of 90° C. through 140° C. to form thetransparent activation layers (32), (42) of the first photovoltaic unit(30) and the second photovoltaic unit (40).

In one another embodiment, the first photovoltaic unit (30) and thesecond photovoltaic unit (40) are perovskite photovoltaic units. Thetransparent electron transport layers of the first photovoltaic unit(30) and the second photovoltaic unit (40) are made of a combination ofPEDOT:PSS (i.e. the combination of PEDOT and PSS), or made of P3HT(poly(3-hexylthiophene)) or PTAA(poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), and preferably havethicknesses of 100 nm through 500 nm, wherein the combination ofPEDOT:PSS, P3HT or PTAA is coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layers of the first photovoltaicunit (30) and the second photovoltaic unit (40). The transparent holetransport layers of the first photovoltaic unit (30) and the secondphotovoltaic unit (40) are made of a combination of PDPP3T:PCBM (i.e.the combination of PDPP3T and PCBM) which is diluted with solvent, andpreferably have thicknesses of 1 nm through 100 nm, wherein thecombination of PDPP3T:PCBM is diluted with the solvent, coated via slitsand then dried by nitrogen atmosphere for 5 minutes with a temperatureof 90° C. through 140° C. to form the transparent hole transport layersof the first photovoltaic unit (30) and the second photovoltaic unit(40). The transparent activation layers of the first photovoltaic unit(30) and the second photovoltaic unit (40) are made of one or acombination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃ (formamidinium leadiodide) and FAPbBr₃ (formamidinium lead bromide) which is diluted withsolvent, and preferably have thicknesses of 200 nm through 800 nm,wherein the one or combination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃and FAPbBr₃ is diluted with the solvent, coated via slits and then driedby nitrogen atmosphere for 5 minutes with a temperature of 90° C.through 140° C. to form the transparent activation layers of the firstphotovoltaic unit (30) and the second photovoltaic unit (40).

In one another embodiment, the first photovoltaic unit (30) is anorganic photovoltaic unit, and the second photovoltaic unit (40) is aperovskite photovoltaic unit. The transparent electron transport layerof the first photovoltaic unit (30) is mainly made of PEI or PEIE, andpreferably has a thickness of 0.5 nm through 10 nm, wherein PEI(polyethylenimine) or PEIE (polyethylenimine ethoxylated) is coated viaslits and then dried by hot air for 3 minutes with a temperature of 90°C. through 140° C. to form the transparent electron transport layer ofthe first photovoltaic unit (30). The transparent hole transport layerof the first photovoltaic unit (30) is mainly made of a combination ofPEDOT:PSS(Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) whichis diluted with solvent and comprises a mixture of a polymer of aplurality of EDOT (3,4-ethylenedioxythiophene monomer) and a pluralityof sodium-p-styrenesulfonate (PSS), and preferably has a thickness of100 nm through 500 nm, wherein the combination of PEDOT:PSS is dilutedwith alcohol or other solvent, coated via slits and then dried bynitrogen atmosphere for 5 minutes with a temperature of 90° C. through140° C. to form the transparent hole transport layer of the firstphotovoltaic unit (30). The transparent activation layer of the firstphotovoltaic unit (30) is made of a combination of P3HT/PCBM or acombination of PCPDTBT/PCBM(poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C₆₁-butyric acid methyl ester) which is diluted with solvent, andpreferably has a thickness of 100 nm through 500 nm, wherein thecombination of P3HT/PCBM is a mixture comprising a polymer semiconductorof a plurality of poly(3-hexylthiophene)(P3HT (p-type material) and aplurality of phenyl-C₆₁-butyric acid methyl ester (PCBM), thecombination of P3HT/PCBM or the combination of PCPDTBT/PCBM is dilutedwith ortho-xylene, coated via slits and then dried by nitrogenatmosphere for 3 minutes with a temperature of 90° C. through 140° C. toform the transparent activation layer of the first photovoltaic unit(30). The transparent electron transport layer of the secondphotovoltaic unit (40) is made of a combination of PEDOT:PSS, or made ofP3HT (poly(3-hexylthiophene)) or PTAA(poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), and preferably has athickness of 100 nm through 500 nm, wherein the combination ofPEDOT:PSS, P3HT or PTAA is coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layer of the second photovoltaicunit (40). The transparent hole transport layer of the secondphotovoltaic unit (40) is made of a combination of PDPP3T:PCBM which isdiluted with solvent, and preferably has a thicknesses of 1 nm through100 nm, wherein the combination of PDPP3T:PCBM is diluted with thesolvent, coated via slits and then dried by nitrogen atmosphere for 5minutes with a temperature of 90° C. through 140° C. to form thetransparent hole transport layer of the second photovoltaic unit (40).The transparent activation layer (42) of the second photovoltaic unit(40) is made of one or a combination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃,FAPbI₃ (formamidinium lead iodide) and FAPbBr₃ (formamidinium leadbromide) which is diluted with solvent, and preferably have thicknessesof 200 nm through 800 nm, wherein the one or combination of CH₃NH₃PbI₃,CsPbBr₃, CsPbI₃, FAPbI₃ and FAPbBr₃ is diluted with the solvent, coatedvia slits and then dried by nitrogen atmosphere for 5 minutes with atemperature of 90° C. through 140° C. to form the transparent activationlayer of the second photovoltaic unit (40).

In one another embodiment, the first photovoltaic unit (30) is aperovskite photovoltaic unit, and the second photovoltaic unit (40) isan organic photovoltaic unit. The transparent electron transport layerof the first photovoltaic unit (30) is made of a combination ofPEDOT:PSS, or made of P3HT (poly(3-hexylthiophene)) or PTAA(poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), and preferably has athickness of 100 nm through 500 nm, wherein the combination ofPEDOT:PSS, P3HT or PTAA is coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layer of the first photovoltaicunit (30). The transparent hole transport layer of the firstphotovoltaic unit (30) is made of a combination of PDPP3T:PCBM which isdiluted with solvent, and preferably has a thicknesses of 1 nm through100 nm, wherein the combination of PDPP3T:PCBM is diluted with thesolvent, coated via slits and then dried by nitrogen atmosphere for 5minutes with a temperature of 90° C. through 140° C. to form thetransparent hole transport layer of the first photovoltaic unit (30).The transparent activation layer (32) of the first photovoltaic unit(30) is made of one or a combination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃,FAPbI₃ (formamidinium lead iodide) and FAPbBr₃ (formamidinium leadbromide) which is diluted with solvent, and preferably have thicknessesof 200 nm through 800 nm, wherein the one or combination of CH₃NH₃PbI₃,CsPbBr₃, CsPbI₃, FAPbI₃ and FAPbBr₃ is diluted with the solvent, coatedvia slits and then dried by nitrogen atmosphere for 5 minutes with atemperature of 90° C. through 140° C. to form the transparent activationlayer of the first photovoltaic unit (30). The transparent electrontransport layer of the second photovoltaic unit (40) is mainly made ofPEI or PEIE, and preferably has a thickness of 0.5 nm through 10 nm,wherein PEI (polyethylenimine) or PEIE (polyethylenimine ethoxylated) iscoated via slits and then dried by hot air for 3 minutes with atemperature of 90° C. through 140° C. to form the transparent electrontransport layer of the second photovoltaic unit (40). The transparenthole transport layer of the second photovoltaic unit (40) is mainly madeof a combination ofPEDOT:PSS(Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) whichis diluted with solvent and comprises a mixture of a polymer of aplurality of EDOT (3,4-ethylenedioxythiophene monomer) and a pluralityof sodium-p-styrenesulfonate (PSS), and preferably has a thickness of100 nm through 500 nm, wherein the combination of PEDOT:PSS is dilutedwith alcohol or other solvent, coated via slits and then dried bynitrogen atmosphere for 5 minutes with a temperature of 90° C. through140° C. to form the transparent hole transport layer of the secondphotovoltaic unit (40). The transparent activation layer (42) of thesecond photovoltaic unit (40) is made of a combination of P3HT/PCBM or acombination of PCPDTBT/PCBM(poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C₆₁-butyric acid methyl ester) which is diluted with solvent, andpreferably has a thickness of 100 nm through 500 nm, wherein thecombination of P3HT/PCBM is a mixture comprising a polymer semiconductorof a plurality of poly(3-hexylthiophene)(P3HT (p-type material) and aplurality of phenyl-C₆₁-butyric acid methyl ester (PCBM), thecombination of P3HT/PCBM or the combination of PCPDTBT/PCBM is dilutedwith ortho-xylene, coated via slits and then dried by nitrogenatmosphere for 3 minutes with a temperature of 90° C. through 140° C. toform the transparent activation layer of the second photovoltaic unit(40).

In implementation, ITO (indium tin oxide), IZO (indium doped zinc oxide)or AZO (aluminum doped zinc oxide) is evaporated or sputtered on thetransparent substrate (20) to form the first transparent electrode layer(51) and the second transparent electrode layer (52), which preferablyhave thicknesses of 50 nm through 200 nm.

In implementation, the first transparent conductive layer (61) is madeof Ag, Au, Pt or Pd, and preferably has a thickness of 50 nm through 200nm, wherein Ag, Au, Pt or Pd is evaporated or sputtered to form thefirst transparent conductive layer (61).

In implementation, the second transparent conductive layer (62) is madeof Ag, Au, Pt or Pd, and preferably has a thickness of 50 nm through 200nm, wherein Ag, Au, Pt or Pd is evaporated or sputtered to form thesecond transparent conductive layer (62).

In implementation, the first insulation layer (71) and the secondinsulation layer (72) are made of polyesters polymer, wherein polyesterspolymer is coated and printed, and then dried by hot air for 10 minuteswith a temperature of 90° C. through 140° C. to form the firstinsulation layer (71) and the second insulation layer (72).

The present disclosure further discloses a manufacturing method of acomposite photovoltaic structure, which comprises steps as shown in FIG.4 through FIG. 12, and the steps are described as follows.

a. forming a transparent electrode material (50), and providing atransparent substrate (20), wherein the transparent electrode material(50) with a predetermined thickness is disposed on a top surface of thetransparent substrate (20).

b. forming a first photovoltaic unit (30), wherein materials of layersof the first photovoltaic unit (30) are sequentially formed on thetransparent electrode material (50), a top surface layer (33) and abottom surface layer (31) of the first photovoltaic unit (30) arerespectively a transparent electron transport layer and a transparenthole transport layer, and a transparent activation layer (32) is formedbetween the top surface layer (33) and the bottom surface layer (31) ofthe first photovoltaic unit (30).

forming a first insulation layer (71), wherein the top surface layer ofthe first photovoltaic unit (30) is etched to form at least one firstinsulation material channel (21) which penetrates the transparentelectrode material (50), and the first insulation material channel (21)is filled with insulation material, such that the first insulation layer(71) is formed in the first insulation material channel (21), and thefirst insulation layer (71) separates the transparent electrode material(50) into a first transparent electrode layer (51) and a secondtransparent electrode layer (52), wherein the first transparentelectrode layer (51) is disposed under the first photovoltaic unit (30),and the second transparent electrode layer (52) is disposed outside thefirst photovoltaic unit (30). The etching can be performed by a laser,for example, a laser emits a laser beam on the top surface layer (33) ofthe first photovoltaic unit (30) to form at least one first insulationmaterial channel (21) which penetrates the transparent electrodematerial (50).

d. forming a first transparent conductive layer (61), wherein a side ofthe first insulation layer (71) is etched to form a first transparentconductive material channel (22) which penetrates the transparentelectrode material (50) from the top surface layer (33) of the firstphotovoltaic unit (30), and transparent conductive material is disposedon the top surface layer (33) of the first photovoltaic unit (30) and inthe first transparent conductive material channel (22), such that thefirst transparent conductive layer (61) is formed, wherein the firsttransparent conductive layer (61) is disposed on the top surface layer(33) of the first photovoltaic unit (30), extends along the side of thefirst insulation layer (71), and is electrically connected to the firsttransparent electrode layer (51).

e. forming a second photovoltaic unit (40), wherein materials of layersof the second photovoltaic unit (40) are sequentially formed on thefirst transparent conductive layer (61) which is disposed on the firstphotovoltaic unit (30), a top surface layer (43) and a bottom surfacelayer (41) of the second photovoltaic unit (40) are respectively atransparent electron transport layer and a transparent hole transportlayer, and a transparent activation layer (42) is disposed between thetop surface layer (43) and the bottom surface layer (41) of the secondphotovoltaic unit (40).

f. forming a second insulation layer (72), wherein the top surface layer(43) of the second photovoltaic unit (40) is etched to form at least onesecond insulation material channel (23) which penetrates the transparentelectrode material (50), and the second insulation material channel (23)is filled with insulation material, such that the second insulationlayer (72) is formed in the second insulation material channel (23).

g. forming a second transparent conductive layer (62), wherein a side ofthe second insulation layer (72) is etched to form a second transparentconductive material channel (24) which penetrates the transparentelectrode material (50) from the top surface layer (43) of the secondphotovoltaic unit (40), and transparent conductive material is disposedon the top surface layer (43) of the second photovoltaic unit (40) andin the second transparent conductive material channel (24), such thatthe second transparent conductive layer (62) is formed, wherein thesecond transparent conductive layer (62) is disposed on the top surfacelayer (43) of the second photovoltaic unit (40), extends along the sideof the second insulation layer (72), and is electrically connected tothe second transparent electrode layer (52).

h. splitting a product, wherein a top surface of the second transparentconductive layer (62) is etched to form a cutting channel (25) whichpenetrates the transparent electrode material (50), so as to separatethe at least one of composite photovoltaic structures on the transparentsubstrate (20), wherein the composite photovoltaic structure has thefirst photovoltaic unit (30) and the second photovoltaic unit (40)stacked on the first photovoltaic unit (30), and both of them aredisposed on the transparent substrate (20) and electrically connected toeach other in parallel, as shown in FIG. 2.

Similarly, in implementation of the manufacturing method of thecomposite photovoltaic structure, an optical hardened layer (80) (shownin FIG. 3) can be disposed on the top surface of the transparentsubstrate (20), and the transparent electrode material (50) is disposedon the optical hardened layer (80). The optical hardened layer (80) isone or a combination of acrylic, epoxy and silicon dioxide, andpreferably has a thickness of 1 μm through 5 μm. By disposing theoptical hardened layer (80), the mechanical strength of the compositephotovoltaic structure can be increased

Similarly, in implementation of the manufacturing method of thecomposite photovoltaic structure, the first photovoltaic unit (30) andthe second photovoltaic unit (40) are organic photovoltaic units; oralternatively, the first photovoltaic unit (30) and the secondphotovoltaic unit (40) are perovskite photovoltaic units; oralternatively, the first photovoltaic unit (30) is an organicphotovoltaic unit, and the second photovoltaic unit (40) is a perovskitephotovoltaic unit; or alternatively, the first photovoltaic unit (30) isa perovskite photovoltaic unit, and the second photovoltaic unit (40) isan organic photovoltaic unit.

Similarly, in implementation of the manufacturing method of thecomposite photovoltaic structure, the first photovoltaic unit (30) andthe second photovoltaic unit (40) are organic photovoltaic units in oneembodiment. The transparent electron transport layers of the firstphotovoltaic unit (30) and the second photovoltaic unit (40) are mainlymade of PEI or PEIE, and preferably have thicknesses of 0.5 nm through10 nm, wherein PEI (polyethylenimine) or PEIE (polyethylenimineethoxylated) is coated via slits and then dried by hot air for 3 minuteswith a temperature of 90° C. through 140° C. to form the transparentelectron transport layers of the first photovoltaic unit (30) and thesecond photovoltaic unit (40). The transparent hole transport layers ofthe first photovoltaic unit (30) and the second photovoltaic unit (40)are mainly made of a combination ofPEDOT:PSS(Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) whichis diluted with solvent and comprises a mixture of a polymer of aplurality of EDOT (3,4-ethylenedioxythiophene monomer) and a pluralityof sodium-p-styrenesulfonate (PSS) (i.e. the combination of PEDOT andPSS), and preferably have thicknesses of 100 nm through 500 nm, whereinthe combination of PEDOT:PSS is diluted with alcohol or other solvent,coated via slits and then dried by nitrogen atmosphere for 5 minuteswith a temperature of 90° C. through 140° C. to form the transparenthole transport layers of the first photovoltaic unit (30) and the secondphotovoltaic unit (40). The transparent activation layers (32), (42) ofthe first photovoltaic unit (30) and the second photovoltaic unit (40)are made of a combination of P3HT/PCBM (i.e. the combination of P3HT andPCBM) or a combination of PCPDTBT/PCBM(poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C₆₁-butyric acid methyl ester) (i.e. the combination of PCPDTBTand PCBM) which is diluted with solvent, and preferably have thicknessesof 100 nm through 500 nm, wherein the combination of P3HT/PCBM is amixture comprising a polymer semiconductor of a plurality ofpoly(3-hexylthiophene)(P3HT (p-type material) and a plurality ofphenyl-C₆₁-butyric acid methyl ester (PCBM), the combination ofP3HT/PCBM or the combination of PCPDTBT/PCBM is diluted withortho-xylene, coated via slits and then dried by nitrogen atmosphere for3 minutes with a temperature of 90° C. through 140° C. to form thetransparent activation layers (32), (42) of the first photovoltaic unit(30) and the second photovoltaic unit (40).

Similarly, in implementation of the manufacturing method of thecomposite photovoltaic structure, the first photovoltaic unit (30) andthe second photovoltaic unit (40) are perovskite photovoltaic units inone another embodiment. The transparent electron transport layers of thefirst photovoltaic unit (30) and the second photovoltaic unit (40) aremade of a combination of PEDOT:PSS (i.e. the combination of PEDOT andPSS), or made of P3HT (poly(3-hexylthiophene)) or PTAA(poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), and preferably havethicknesses of 100 nm through 500 nm, wherein the combination ofPEDOT:PSS, P3HT or PTAA is coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layers of the first photovoltaicunit (30) and the second photovoltaic unit (40). The transparent holetransport layers of the first photovoltaic unit (30) and the secondphotovoltaic unit (40) are made of a combination of PDPP3T:PCBM (i.e.the combination of PDPP3T and PCBM) which is diluted with solvent, andpreferably have thicknesses of 1 nm through 100 nm, wherein thecombination of PDPP3T:PCBM is diluted with the solvent, coated via slitsand then dried by nitrogen atmosphere for 5 minutes with a temperatureof 90° C. through 140° C. to form the transparent hole transport layersof the first photovoltaic unit (30) and the second photovoltaic unit(40). The transparent activation layers (32), (42) of the firstphotovoltaic unit (30) and the second photovoltaic unit (40) are made ofone or a combination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃(formamidinium lead iodide) and FAPbBr₃ (formamidinium lead bromide)which is diluted with solvent, and preferably have thicknesses of 200 nmthrough 800 nm, wherein the one or combination of CH₃NH₃PbI₃, CsPbBr₃,CsPbI₃, FAPbI₃ and FAPbBr₃ is diluted with the solvent, coated via slitsand then dried by nitrogen atmosphere for 5 minutes with a temperatureof 90° C. through 140° C. to form the transparent activation layers ofthe first photovoltaic unit (30) and the second photovoltaic unit (40).

Similarly, in implementation of the manufacturing method of thecomposite photovoltaic structure, the first photovoltaic unit (30) is anorganic photovoltaic unit, and the second photovoltaic unit (40) is aperovskite photovoltaic unit in one another embodiment. The transparentelectron transport layer of the first photovoltaic unit (30) is mainlymade of PEI or PEIE, and preferably has a thickness of 0.5 nm through 10nm, wherein PEI (polyethylenimine) or PEIE (polyethylenimineethoxylated) is coated via slits and then dried by hot air for 3 minuteswith a temperature of 90° C. through 140° C. to form the transparentelectron transport layer of the first photovoltaic unit (30). Thetransparent hole transport layer of the first photovoltaic unit (30) ismainly made of a combination ofPEDOT:PSS(Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) whichis diluted with solvent and comprises a mixture of a polymer of aplurality of EDOT (3,4-ethylenedioxythiophene monomer) and a pluralityof sodium-p-styrenesulfonate (PSS), and preferably has a thickness of100 nm through 500 nm, wherein the combination of PEDOT:PSS is dilutedwith alcohol or other solvent, coated via slits and then dried bynitrogen atmosphere for 5 minutes with a temperature of 90° C. through140° C. to form the transparent hole transport layer of the firstphotovoltaic unit (30). The transparent activation layer of the firstphotovoltaic unit (30) is made of a combination of P3HT/PCBM or acombination of PCPDTBT/PCBM(poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C₆₁-butyric acid methyl ester) which is diluted with solvent, andpreferably has a thickness of 100 nm through 500 nm, wherein thecombination of P3HT/PCBM is a mixture comprising a polymer semiconductorof a plurality of poly(3-hexylthiophene)(P3HT (p-type material) and aplurality of phenyl-C₆₁-butyric acid methyl ester (PCBM), thecombination of P3HT/PCBM or the combination of PCPDTBT/PCBM is dilutedwith ortho-xylene, coated via slits and then dried by nitrogenatmosphere for 3 minutes with a temperature of 90° C. through 140° C. toform the transparent activation layer of the first photovoltaic unit(30). The transparent electron transport layer of the secondphotovoltaic unit (40) is made of a combination of PEDOT:PSS, or made ofP3HT (poly(3-hexylthiophene)) or PTAA(poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), and preferably has athickness of 100 nm through 500 nm, wherein the combination ofPEDOT:PSS, P3HT or PTAA is coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layer of the second photovoltaicunit (40). The transparent hole transport layer of the secondphotovoltaic unit (40) is made of a combination of PDPP3T:PCBM which isdiluted with solvent, and preferably has a thicknesses of 1 nm through100 nm, wherein the combination of PDPP3T:PCBM is diluted with thesolvent, coated via slits and then dried by nitrogen atmosphere for 5minutes with a temperature of 90° C. through 140° C. to form thetransparent hole transport layer of the second photovoltaic unit (40).The transparent activation layer of the second photovoltaic unit is madeof one or a combination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃(formamidinium lead iodide) and FAPbBr₃ (formamidinium lead bromide)which is diluted with solvent, and preferably have thicknesses of 200 nmthrough 800 nm, wherein the one or combination of CH₃NH₃PbI₃, CsPbBr₃,CsPbI₃, FAPbI₃ and FAPbBr₃ is diluted with the solvent, coated via slitsand then dried by nitrogen atmosphere for 5 minutes with a temperatureof 90° C. through 140° C. to form the transparent activation layer ofthe second photovoltaic unit (40).

Similarly, in implementation of the manufacturing method of thecomposite photovoltaic structure, the first photovoltaic unit (30) is aperovskite photovoltaic unit, and the second photovoltaic unit (40) isan organic photovoltaic unit in one another embodiment. The transparentelectron transport layer of the first photovoltaic unit (30) is made ofa combination of PEDOT:PSS, or made of P3HT (poly(3-hexylthiophene)) orPTAA (poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), and preferablyhas a thickness of 100 nm through 500 nm, wherein the combination ofPEDOT:PSS, P3HT or PTAA is coated via slits and then dried by nitrogenatmosphere for 5 minutes with a temperature of 90° C. through 140° C. toform the transparent electron transport layer of the first photovoltaicunit (30). The transparent hole transport layer of the firstphotovoltaic unit (30) is made of a combination of PDPP3T:PCBM which isdiluted with solvent, and preferably has a thicknesses of 1 nm through100 nm, wherein the combination of PDPP3T:PCBM is diluted with thesolvent, coated via slits and then dried by nitrogen atmosphere for 5minutes with a temperature of 90° C. through 140° C. to form thetransparent hole transport layer of the first photovoltaic unit (30).The transparent activation layer of the first photovoltaic unit (30) ismade of one or a combination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃(formamidinium lead iodide) and FAPbBr₃ (formamidinium lead bromide)which is diluted with solvent, and preferably have thicknesses of 200 nmthrough 800 nm, wherein the one or combination of CH₃NH₃PbI₃, CsPbBr₃,CsPbI₃, FAPbI₃ and FAPbBr₃ is diluted with the solvent, coated via slitsand then dried by nitrogen atmosphere for 5 minutes with a temperatureof 90° C. through 140° C. to form the transparent activation layer ofthe first photovoltaic unit (30). The transparent electron transportlayer of the second photovoltaic unit (40) is mainly made of PEI orPEIE, and preferably has a thickness of 0.5 nm through 10 nm, whereinPEI (polyethylenimine) or PEIE (polyethylenimine ethoxylated) is coatedvia slits and then dried by hot air for 3 minutes with a temperature of90° C. through 140° C. to form the transparent electron transport layerof the second photovoltaic unit (40). The transparent hole transportlayer of the second photovoltaic unit (40) is mainly made of acombination ofPEDOT:PSS(Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)) whichis diluted with solvent and comprises a mixture of a polymer of aplurality of EDOT (3,4-ethylenedioxythiophene monomer) and a pluralityof sodium-p-styrenesulfonate (PSS), and preferably has a thickness of100 nm through 500 nm, wherein the combination of PEDOT:PSS is dilutedwith alcohol or other solvent, coated via slits and then dried bynitrogen atmosphere for 5 minutes with a temperature of 90° C. through140° C. to form the transparent hole transport layer of the secondphotovoltaic unit (40). The transparent activation layer of the secondphotovoltaic unit (40) is made of a combination of P3HT/PCBM or acombination of PCPDTBT/PCBM(poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C₆₁-butyric acid methyl ester) which is diluted with solvent, andpreferably has a thickness of 100 nm through 500 nm, wherein thecombination of P3HT/PCBM is a mixture comprising a polymer semiconductorof a plurality of poly(3-hexylthiophene)(P3HT (p-type material) and aplurality of phenyl-C₆₁-butyric acid methyl ester (PCBM), thecombination of P3HT/PCBM or the combination of PCPDTBT/PCBM is dilutedwith ortho-xylene, coated via slits and then dried by nitrogenatmosphere for 3 minutes with a temperature of 90° C. through 140° C. toform the transparent activation layer of the second photovoltaic unit(40).

Similarly, in implementation of the manufacturing method of thecomposite photovoltaic structure, ITO (indium tin oxide), IZO (indiumdoped zinc oxide) or AZO (aluminum doped zinc oxide) is evaporated orsputtered on the transparent substrate (20) to form the firsttransparent electrode layer (51) and the second transparent electrodelayer (52), which preferably have thicknesses of 50 nm through 200 nm.

Similarly, in implementation of the manufacturing method of thecomposite photovoltaic structure, the first transparent conductive layer(61) is made of Ag, Au, Pt or Pd, and preferably has a thickness of 50nm through 200 nm, wherein Ag, Au, Pt or Pd is evaporated or sputteredto form the first transparent conductive layer (61).

Similarly, in implementation of the manufacturing method of thecomposite photovoltaic structure, the second transparent conductivelayer (62) is made of Ag, Au, Pt or Pd, and preferably has a thicknessof 50 nm through 200 nm, wherein Ag, Au, Pt or Pd is evaporated orsputtered to form the second transparent conductive layer (62).

Similarly, in implementation of the manufacturing method of thecomposite photovoltaic structure, the first insulation layer (71) andthe second insulation layer (72) are made of polyesters polymer, whereinpolyesters polymer is coated and printed, and then dried by hot air for10 minutes with a temperature of 90° C. through 140° C. to form thefirst insulation layer (71) and the second insulation layer (72).

The detection results of embodiments 1-3, comparative example 1 areshown as follows. By using the composite photovoltaic structure and themanufacturing method of the composite photovoltaic structure, tencomposite photovoltaic structures (having a dimension of 2.5 cm lengthand 0.5 cm width) are made and electrically connected in series to formthe photovoltaic battery assemblies of embodiments 1-3; otherphotovoltaic structures of FIG. 1 in the prior art are made electricallyconnected in series to form the photovoltaic battery assembly of thecomparative example 1. The photovoltaic battery assemblies are formed bythe gas barrier package, and disposed on the substrate with the lightillumination source on the two sides of the substrate, wherein thelighting environment has 1000 lux, the open voltages (V) and the shortcurrents over normalized unit area (I/cm²) of the photovoltaic batteryassemblies are measured and shown in Table 1.

TABLE 1 comparative embodiment 1 embodiment 2 embodiment 3 example 1 thetransparent transparent PET film/25 μm composite substrate(20)photovoltaic second transparent ITO/ thickness of 60 nm structureelectrode layer(52) of the first transparent ITO/ thickness of 60 nmpresent electrode layer(51) disclosure first bottom PEDOT:PSSPDPP3T:PCBM PEDOT:PSS photovoltaic unit(30) surface thickness ofthickness of thickness of layer(31) 300 nm 50 nm 300 nm (transparenthole transport layer) transparent P3HT/PCBM CH₃NH₃PbI₃ P3HT/PCBMactivation thickness of thickness of thickness of layer(32) 300 nm 500nm 300 nm top surface PEI/ PEDOT:PSS PEI/ layer(33) thickness ofthickness of thickness of (transparent 5 nm 300 nm 5 nm electrontransport layer) first insulation polyesters polymer/thickness of 1 μmlayer(71) first transparent Ag/thickness of 100 nm conductive layer(61)second bottom PEDOT:PSS PDPP3T:PCBM PDPP3T:PCBM photovoltaic unit(40)surface thickness of thickness of thickness of layer(41) 300 nm 50 nm 50nm (transparent hole transport layer) transparent P3HT/PCBM CH₃NH₃PbI₃CH₃NH₃PbI₃ activation thickness of thickness of thickness of layer(42)300 nm 500 nm 500 nm top surface PEI/ PEDOT:PSS PEDOT:PSS layer(43)thickness of thickness of thickness of (transparent 5 nm 300 nm 300 nmelectron transport layer) second insulation polyesters polymer/thicknessof 1 μm layer(72) second transparent Ag/thickness of 100 nm conductivelayer(62) conventional transparent transparent photovoltaic structuresubstrate(11) PET film/ thickness of 25 μm second transparent ITO/electrode layer(132) thickness of 60 nm first transparent ITO/ electrodelayer(131) thickness of 60 nm bottom surface PEDOT:PSS layer(121)thickness of (transparent hole 300 nm transport layer) transparentactivation P3HT/PCBM layer(122) thickness of 300 nm top surfacelayer(123) PEI/ (transparent electron thickness of transport layer) 5 nm(142) insulation layer polyesters polymer/ thickness of 1 μm (141)transparent Ag/ conductive layer thickness of 100 nm detection openvoltage (V) 5.3 5.8 5.7 5.2 results short currents over unit 200 1600850 105 area (μA/cm²)

In embodiment 1, the first photovoltaic unit (30) and the secondphotovoltaic unit (40) are organic photovoltaic units; in embodiment 2,the first photovoltaic unit (30) and the second photovoltaic unit (40)are perovskite photovoltaic units; in embodiment 3, the firstphotovoltaic unit (30) is an organic photovoltaic unit and the secondphotovoltaic unit (40) is a perovskite photovoltaic unit. In comparativeexample 1, the conventional photovoltaic unit is the organicphotovoltaic unit. It is obvious that, the open voltages (V) and theshort currents over normalized unit area (I/cm²) of embodiments 1-3 arebetter than those of comparative example 1.

To sum up, by electrically connecting the first photovoltaic unit andthe second photovoltaic unit in parallel on the transparent substrate,the composite photovoltaic structure has a photoelectric reaction areaof a significantly improved omnidirectional concentration gain, anefficiently induced current and a low manufacturing cost, withoutaffecting the whole structure thickness. Thus, the compositephotovoltaic structure meets the demand of small size product.

The above-mentioned descriptions represent merely the exemplaryembodiment of the present disclosure, without any intention to limit thescope of the present disclosure thereto. Various equivalent changes,alternations or modifications based on the claims of present disclosureare all consequently viewed as being embraced by the scope of thepresent disclosure.

1. A composite photovoltaic structure, comprising: a transparentsubstrate; a first photovoltaic unit, disposed on the transparentsubstrate; a second photovoltaic unit, stacked on the first photovoltaicunit, and electrically connected to the first photovoltaic unit inparallel, wherein top surface layers and bottom surface layers of thefirst photovoltaic unit and the second photovoltaic unit arerespectively transparent electron transport layers and transparent holetransport layers, transparent activation layers are respectivelydisposed between the top surface layers and the bottom surface layers ofthe first photovoltaic unit and the second photovoltaic unit; a firsttransparent electrode layer and a second transparent electrode layer,insulated to each other, disposed on a top surface of the transparentsubstrate, wherein the first photovoltaic unit is disposed on the secondtransparent electrode layer, and the bottom surface layer of the firstphotovoltaic unit contacts the second transparent electrode layer; afirst transparent conductive layer, electrically connected to the firsttransparent electrode layer, disposed on the top surface layer of thefirst photovoltaic unit, wherein the second photovoltaic unit isdisposed on the first transparent conductive layer, and the bottomsurface layer of the second photovoltaic unit contacts the firsttransparent conductive layer; a second transparent conductive layer,electrically connected to the second transparent electrode layer,disposed on top surface layer of the second photovoltaic unit; a firstinsulation layer, disposed between one side of the first photovoltaicunit and the first transparent conductive layer, wherein the firsttransparent conductive layer extends to the first transparent electrodelayer along the side of the first photovoltaic unit; and a secondinsulation layer, disposed between one side of the second photovoltaicunit, one side of the first transparent conductive layer, another sideof the photovoltaic unit and the second transparent conductive layer,wherein the second transparent conductive layer extends to the secondtransparent electrode layer along the side of the second photovoltaicunit, the side of the first transparent conductive layer and other sideof the first photovoltaic unit.
 2. The composite photovoltaic structureaccording to claim 1, wherein the composite photovoltaic structurefurther comprises an optical hardened layer disposed between the topsurface of the transparent substrate and the first transparent electrodelayer, and between the top surface of the transparent substrate and thesecond transparent electrode layer.
 3. The composite photovoltaicstructure according to claim 2, wherein the optical hardened layer isone or a combination of acrylic, epoxy and silicon dioxide, and has athickness of 1 μm through 5 μm.
 4. The composite photovoltaic structureaccording to claim 1, wherein the first photovoltaic unit and the secondphotovoltaic unit are organic photovoltaic units.
 5. The compositephotovoltaic structure according to claim 1, wherein the firstphotovoltaic unit and the second photovoltaic unit are perovskitephotovoltaic units.
 6. The composite photovoltaic structure according toclaim 1, wherein the first photovoltaic unit is an organic photovoltaicunit, and the second photovoltaic unit is a perovskite photovoltaicunit.
 7. The composite photovoltaic structure according to claim 1,wherein the first photovoltaic unit is a perovskite photovoltaic unit,and the second photovoltaic unit is an organic photovoltaic unit.
 8. Thecomposite photovoltaic structure according to claim 1, wherein the firstphotovoltaic unit and the second photovoltaic unit are organicphotovoltaic units; the transparent electron transport layers of thefirst photovoltaic unit and the second photovoltaic unit are made of PEIor PEIE, and have thicknesses of 0.5 nm through 10 nm; the transparenthole transport layers of the first photovoltaic unit and the secondphotovoltaic unit are made of a combination of PEDOT and PSS, and havethicknesses of 100 nm through 500 nm; the transparent activation layersof the first photovoltaic unit and the second photovoltaic unit are madeof a combination of P3HT and PCBM or a combination of PCPDTBT and PCBM,and have thicknesses of 100 nm through 500 nm.
 9. The compositephotovoltaic structure according to claim 1, wherein the firstphotovoltaic unit and the second photovoltaic unit are perovskitephotovoltaic units; the transparent electron transport layers of thefirst photovoltaic unit and the second photovoltaic unit are made of acombination of PEDOT and PSS, or made of P3HT or PTAA, and havethicknesses of 100 nm through 500 nm; the transparent hole transportlayers of the first photovoltaic unit and the second photovoltaic unitare made of a combination of PDPP3T and PCBM, and have thicknesses of 1nm through 100 nm; the transparent activation layers of the firstphotovoltaic unit and the second photovoltaic unit are made of one or acombination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃ and FAPbBr₃, and havethicknesses of 200 nm through 800 nm.
 10. The composite photovoltaicstructure according to claim 1, wherein the first photovoltaic unit isan organic photovoltaic unit, and the second photovoltaic unit is aperovskite photovoltaic unit; the transparent electron transport layerof the first photovoltaic unit is made of PEI or PEIE, and has athickness of 0.5 nm through 10 nm; a transparent hole transport layer ofthe first photovoltaic unit is made a combination of PEDOT and PSS, andhas a thickness of 100 nm through 500 nm; the transparent activationlayer of the first photovoltaic unit is made of a combination of P3HTand PCBM or a combination of PDPDTBT and PCBM, and has a thickness of100 nm through 500 nm; the transparent electron transport layer of thesecond photovoltaic unit is made of a combination of PEDOT and PSS, ormade of P3HT or PTAA, and has a thickness of 100 nm through 500 nm; thetransparent hole transport layer of the second photovoltaic unit is madeof a combination of PDPP3T and PCBM, and has a thickness of 1 nm through100 nm; the transparent activation layer of the second photovoltaic unitis made of one or a combination of CH₃NH₃PbI₃, CsPbBr₃, CsPbI₃, FAPbI₃and FAPbBr₃, and has thickness of 200 nm through 800 nm.
 11. Thecomposite photovoltaic structure according to claim 1, wherein the firstphotovoltaic unit is a perovskite photovoltaic unit, and the secondphotovoltaic unit is an organic photovoltaic unit; the transparentelectron transport layer of the first photovoltaic unit is made of acombination of PEDOT and PSS, and have thicknesses of 100 nm through 500nm; the transparent hole transport layer of the first photovoltaic unitis made of a combination of PDPP3T and PCBM, and have thicknesses of 1nm through 100 nm; the transparent activation layer of the firstphotovoltaic unit is made of one or a combination of CH₃NH₃PbI₃,CsPbBr₃, CsPbI₃, FAPbI₃ and FAPbBr₃, and have thicknesses of 200 nmthrough 800 nm; the transparent electron transport layer of the secondphotovoltaic unit is made of PEI or PEIE, and has a thickness of 0.5 nmthrough 10 nm; the transparent hole transport layer of the secondphotovoltaic unit is made a combination of PEDOT and PSS, and has athickness of 100 nm through 500 nm; the transparent activation layer ofthe second photovoltaic unit is made of a combination of P3HT and PCBMor a combination of PDPDTBT and PCBM, and has a thickness of 100 nmthrough 500 nm.
 12. The composite photovoltaic structure according toclaim 1, wherein the first transparent electrode layer and the secondtransparent electrode layer are made of ITO, IZO or AZO, and havethicknesses of 50 nm through 200 nm.
 13. The composite photovoltaicstructure according to claim 1, wherein the first transparent conductivelayer is made of Ag, Au, Pt or Pd, and has a thickness of 50 nm through200 nm.
 14. The composite photovoltaic structure according to claim 1,wherein the second transparent conductive layer is made of Ag, Au, Pt orPd, and has a thickness of 50 nm through 200 nm.
 15. The compositephotovoltaic structure according to claim 1, wherein the firstinsulation layer and the second insulation layer are made of polyesterspolymer. 16-30. (canceled)